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0.5um HFET Process
0.5um HFET offers excellent linearity and power density for wireless communication amplifiers that require super high linearity. A linearity figure of merit (IP3-P1dB) of 20 dB can be achieved. Design kits, models and samples are available upon request. Excellent reliability with an MTTF of 2.95E+9 hours are achieved. This process has been qualified and in production since 2005.
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Example of HFET Performance at 5 GHz:
- Wg = 600um
- Frequency = 5 GHz, 1 MHz spacing
- IP3 measured at + 8 dBm/tone
|
| Ids |
80mA (~50% Idss) |
| Vds |
5V |
8V |
| I'S |
0.6717<-168.03 |
0.2968<132.70 |
| I'L |
0.1425<65.66 |
0.3150<107.44 |
| Gain (dB) |
11 |
13 |
| IP3 (dBm) |
41.5 |
42.8 |
| P1dB (dBm) |
22 |
25.5 |
| IP3-P1dB (dB) |
19.5 |
17.3 |
| IP3 / Pdc |
35.3 |
29.8 |
|
| Ids |
100mA (~60% Idss) |
| Vds |
5V |
8V |
| I'S |
0.3916<175.44 |
0.2182<179.58 |
| I'L |
0.3016<122.84 |
0.1491<42.36 |
| Gain (dB) |
12.5 |
12.8 |
| IP3 (dBm) |
42.2 |
43 |
| P1dB (dBm) |
22.8 |
26 |
| IP3-P1dB (dB) |
19.4 |
17 |
| IP3 / Pdc |
33.2 |
24.9 |
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HFET Performance at 2 GHz:
|
2400um HFET
Eval Board |
| Ids |
325 |
| %Idss |
50 |
| Vds |
8 |
| IP3 (dBm) |
47.5 |
| P1dB (dBm) |
30 |
| IP3-P1dB (dB) |
17.5 |
| IP3 / Pdc |
21.6 |
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4800um HFET
Eval Board |
| Ids |
545 |
| %Idss |
42 |
| Vds |
7 |
| IP3 (dBm) |
50.5 |
| P1dB (dBm) |
33 |
| IP3-P1dB (dB) |
17.5 |
| IP3 / Pdc |
25.7 |
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