PRESS RELEASE
Global
Communication Semiconductors Announces High Breakdown Voltage InGaP HBT Process for Wireless
Telecommunications Infrastructure Applications
October 17, 2002,
TORRANCE, CALIF. - - - GCS, Inc. (Global Communications
Semiconductor, Inc.) a pure-play III-V compound semiconductor wafer
foundry announced today that it will now offer a proprietary High
Breakdown Voltage InGaP HBT foundry process to address demanding
wireless infrastructure needs such as base stations.
“With
our High Breakdown Voltage process we can address the stringent
requirements of infrastructure applications in terms of both
performance and reliability. Until now the only other choice was
PHEMT and GCS’ proprietary High Breakdown Voltage InGaP HBT
process allows for a more compact IC, higher yield and a superior
combination of power and linearity.
These are significant achievements considering the stringent
requirements,” commented Dr. Sam Lee, Chief Executive Officer of
GCS. “This new
process complements our process portfolio and enables GCS to address
an even wider range of markets and customers’ needs while
maintaining GCS’ position as the world’s leading pure-play III-V
compound semiconductor wafer foundry,” continued Dr. Lee.
Global
Communication Semiconductors Inc., based in Torrance, California, an
ISO 9002 certified company, provides compound semiconductor foundry
services to the wireless telecommunication and high-speed networking
industries. GCS currently offers foundry service for both InGaP and
InP HBT processes and provides optoelectronic foundry services for
PIN diodes used in the fiber optic communication market. Additional
information may be found at www.gcsincorp.com.
For
more information on GCS contact:
Bill
Vitez
Director
of Sales
Global
Communication Semiconductors, Inc.
23155
Kashiwa Court,
Torrance,
CA 90505
Tel:
310-530-7274 x 138
Fax:
310-517-8200
Email:
bvitez@gcsincorp.com
Web
site: http://www.gcsincorp.com
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