PRESS RELEASE
Global Communication Semiconductors, Inc. (GCS) Announces
Breakthrough in InP HBT Process Development.
GCS, a pure play compound semiconductor foundry,
is now offering InP HBT.
August 13, 2001, TORRANCE, CALIF. - - - GCS, Inc.
(Global Communications Semiconductor, Inc.) a pure-play compound semiconductor
wafer foundry announced today that it has made a significant breakthrough in the
development of a proprietary InP (Indium Phosphide) HBT foundry process.
“The performance advantages of InP HBT are well known.
The principal challenge is to provide a high performance technology that
is also reliable and manufacturable.” remarked Chanh Nguyen, CTO of GCS.
“With our proprietary device design and fabrication process technology,
we have addressed this challenge in a fundamental way.
GCS’ proprietary InP HBT technology uses a novel epi design with a
carbon-doped base to ensure long-term reliability. GCS has also developed a low-loss interconnect technology for
high-speed circuits.” continued Dr. Nguyen.
GCS’
current baseline InP HBT process has 1µm emitter width with fT and fmax
above 160 GHz operating at a current density below 75 kA/cm2.
By driving these baseline devices at higher current densities, GCS has
demonstrated an fT above 200 GHz.
Another feature of this proprietary process is that the emitter width is
scalable to sub micron size. This
scalability enables GCS to reduce device geometry and power dissipation while
increasing the circuit speed. With
this technology, GCS is not only capable of meeting OC-768 requirements, but is
also well positioned to serve the industry in future applications at higher
speeds.
“GCS has provided advanced pure-play compound
semiconductor foundry services to both Design Houses and IDM’s (Integrated
Design and Manufacturers) for three years now.
GCS’ proprietary InGaP HBT process is currently being used for power
amplifiers in handsets, high voltage power amplifiers in base stations and for
10Gb/s TIAs and laser drivers.” commented Owen K. Wu, CEO and President of
GCS. “Therefore, it was a
natural progression for GCS to develop an InP process to address the 40Gb/s
requirement of OC-768 and power amplifiers for 3G applications.
As the only pure-play InP foundry, GCS will play a pivotal role to assist
companies to bring 40Gp/s components and 3G power amplifier products to market.
Our optoelectronics group is currently delivering 1.31and 1.55 micron InP
based PiN Diodes. By combining our
optoelectronics with our InP HBT process, GCS is now able to address OEIC (Opto
Electronic Integrated Circuit) applications.
We are now seeking companies who are interested in targeting OEIC
applications.” Continued Dr. Wu.
Global Communication Semiconductors Inc., based in
Torrance, California, is an ISO 9002 certified company. GCS
provides compound semiconductor foundry services to the wireless
telecommunication and high-speed networking industries.
GCS currently offers foundry service for both HBT InGaP and InP and PHEMT
processes. Additionally, GCS
provides epitaxial wafers, optoelectronic devices such as VCSELs and PIN diodes
for fiber optic communication market and is delivering SAW filter foundry
service for handset applications.
For
more information on GCS contact:
Bill
Vitez
Director
of Marketing and Sales
Global
Communication Semiconductors, Inc.
23600
Telo Avenue, Suite 118
Torrance,
CA 90505
Tel:
310-530-7274 x 714
Fax:
310-517-8201
Email:
bvitez@gcsincorp.com
Web
site: http://www.gcsincorp.com
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