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InGaP HBT
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GaAs PHEMT
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Integrated Passive Devices
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InP HBT
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Optoelectronics
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SAW
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GCS Technology Overview Download PDF
Global Communication Semiconductors, Inc. offers a variety of processes
to meet various design needs. Our baseline processes include GaAs
based power and high fT HBT, PHEMT power, switch and HFET technologies, which can meet many requirements
for wireless, high speed fiber optics and millimeter-wave frequency
applications. These mature processes are available immediately to fill your
high volume production requirements. In addition, we also offer foundry
services in opto electronics for the commercial optoelectronics industry.
For more information, please contact Wing Yau at 310-530-7274 x107
or wyau@gcsincorp.com or Simon Yu at 310-530-7274
x138 or syu@gcsincorp.com.
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Technology
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Process
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Application
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InGaP HBT
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P1
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High Linearity for Handset and
WLAN PAs
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P2
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High Linearity for Handset and
WLAN PAs
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P5
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High Ruggedness for GSM/DCS PA
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P6
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HBV for Infrastructure Amps
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D1
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High Ft for Digital and
Transceiver ICs
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GaAs PHEMT
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0.5 µm Power
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PA and LNA to 20 GHz
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0.5 µm Switch
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Low Cost Switches
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E/D Mode Power
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Integrated Multifunction ICs
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0.25 µm Power
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Amplifiers up to 40 GHz
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HFET
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0.5 µm HFET
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High Linearity Amplifier
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IPD
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High Q LCR on GaAs
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Filter and Matching/Bias Network
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InP HBT
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SHBT
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High Speed Digital and Analog ICs
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DHBT
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High Voltage Analog and RF ICs
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Optoelectronics
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GaAs PIN
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850nm PD, 1-20 Gbps
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InGaAs PIN
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1310 & 1550nm PD, 1-20 Gpbs
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QWIP
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LWIR (9 um) Focal Plane Array
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Ridge Waveguide, SOA
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Customer Specific
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Modulators, Laser Diode
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VCSEL
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850 nm, Customer Specific
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LED / RCLED
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LPH Array, POF
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SAW
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0.4 µm Linewidth/Spacing
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Filters up to 2.4 GHz
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