Global Communication Semiconductors, Inc.

High Linearity InGaP Power HBT


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InGaP HBT

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Power InGaP HBT

  • Variety of HBT processes with optimum performance for each unique application
  • Superior performance for WLAN, WiMAX, and CDMA applications
  • Production process qualified by major IDM’s
  • Most extensive reliability data
  • Meets or exceeds most environmental test requirements

    • Typical Applications:
  • Handset (CDMA) PA
  • WLAN (802.11) & WiMAX PA
  • Gain blocks
    		• Features:
  • High gain
  • High linearity

    • Performance of P1 for CDMA

    Typical Parametric Data:

    Parameter

    P1

    P2

    Beta

    120

    70

    fT (GHz)

    45

    40

    fmax (GHz)

    55

    58

    BVcbo (V)

    22

    23

    BVceo (V)

    12.5

    13.5

    BVbeo (V)

    6.5

    6.5

    Vturn-on (V)

    1.11

    1.11

    Jc(max), KA/cm2

    25

    25

    Efficiency (%)

    > 65

    > 65

  • Newsletter from Plextek which has a 5GHz VCO using GCS's InGap HBT P2 process
  • Plextek Paper: A Universal GaAs HBT PA with Active Bias Circuitry, Covering 4.9-6 GHz