Global Communication Semiconductors, Inc.

GCS Offers Advanced InGaP HBT Foundry Processes


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Technology Overview

High fT HBT

Power HBT

High Breakdown HBT


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InGaP HBT Technology Overview

  • Variety of HBT processes with optimum performance for each unique application production

  • Process qualified by major IDM’s 

  • Most extensive reliability data

  • Meets or exceeds most environmental test requirements

Parameter

P1

P2

P5

P6

D1

Beta

120

75

70

70

150

Ft (GHz)

45 [1]

40 [1]

32 [1]

30 [1]

65 [2]

Fmax (GHz)

55 [1]

58 [1]

60 [1]

65 [1]

70 [2]

BVcbo (V)

22

23

35

45

17

BVceo (V)

12.5

13.5

18.5

23

7.5

BVbeo (V)

6.5

6.5

6.5

6.5

6.5

V_turn-on (V)

1.11

1.11

1.11

1.11

1.11

Jc(max), KA/cm2

25

25

25

25

50

Efficiency (%)

> 65

> 65

> 68

> 70

-

[1] Based on 2.8 X 15 µm DB
[2] Based on 2 X 6 µm