Global Communication Semiconductors, Inc.

High fT InGaP HBT


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InGaP HBT

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GaAs/InGaP HBT High fT Process

  • Production process qualified by major IDM's (in production)

  • High level of integration 

  • Schottky diode available

  • Ideal for voltage control oscillators (VCO) and high speed ICs

  • Meets or exceeds most environmental test requirements

Typical Applications:
  • Transceiver components
  • Mixed signal ICs
  • VCOs

    Features:
  • Low phase noise and high fT
  • Idea for:
         - VCO
         - Prescalar/Divider
         - OC48/192
           (TIA, laser driver)
    		• Typical Parametric Data:

    Parameter

    Typical

    Beta

    150

    fT (GHz)

    65

    fmax (GHz)

    70

    BVcbo (V)

    17

    BVceo (V)

    7.5

    BVbeo (V)

    6.5

    Vturn-on (V)

    1.11

    Jc(max), KA/cm2

    50

    10.0 Gbits (OC-192)
    Input Vpp: 250 mV
    Pattern: 231-1

    5 GHz VCO
    Phase Noise: -105 dBc/Hz
    @ 100 KHz offset