Global Communication Semiconductors, Inc.

High Breakdown InGaP HBT


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InGaP HBT

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High Breakdown InGaP HBT

  • Variety of HBT processes with optimum performance for each unique application
  • Superior performance for GSM and infrastructure applications
  • Production process qualified by major IDM’s
  • Most extensive reliability data
  • Meets or exceeds most environmental test requirements

    • Typical Applications:
  • Handset (GSM) PA
  • Infrastructure
    		• Features:
  • P5: High ruggedness
        - Ideal for GSM/DCS, EDGE PA
  • P6: High voltage operation
        - Ideal for infrastructure and CATV

    • Performance of P5 for GSM

    Typical Parametric Data:

    Parameter

    P5

    P6

    Beta

    70

    70

    fT (GHz)

    32

    30

    fmax (GHz)

    60

    65

    BVcbo (V)

    35

    45

    BVceo (V)

    18.5

    23

    BVbeo (V)

    6.5

    6.5

    Vturn-on (V)

    1.11

    1.11

    Jc(max), KA/cm2

    25

    25

    Efficiency (%)

    > 68

    > 70