Global Communication Semiconductors, Inc.

History of GCS


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Global Communication Semiconductors, Inc., incorporated in 1997, is an ISO 9001:2000 certified pure-play compound semiconductor foundry conveniently located 15 miles south of Los Angeles International Airport. GCS’s business goal is to supply low cost, high quality, specialty semiconductor devices, integrated circuits and solutions to the wireless, telecommunications and fiber optical communications markets. To that end GCS has been delivering HBT PA, HBT digital, high speed InP HBT ICs, PHEMT PA, switch and linear HFET as well as optoelectronic devices and SAW RFID and filters since 1999.

  • Mature GaAs InGaP HBT technology in production

  • Mature PHEMT PA and switch technology in production

  • High linear HFET technology in production

  • High performance, low cost GaAs and InGaAs PIN PDs

  • Advanced proprietary InP IC and opto technology

  • Manufacturing process qualified by major IDM’s

  • ISO 9002 certified, SPC & quality management system

As is evident by the world-wide growth trend in the silicon foundry industry, GCS’s pure-play business model offers these unique advantages:

  • No conflict of interests between customer and foundry

  • Strict IP protection policy

  • Access to leading edge technologies

  • Lower cost and faster time to market

GCS currently has a capacity of 1,000 wspm with the space for immediate expansion to 2,000 wspm.

Major Events

01/2007    GCS and Xponent Photonics, Inc. Established a Strategic Partnership of Wafer Foundry Agreement
03/2006    WJ Communications, Inc. Selected GCS as a Foundry Provider
04/2004    GCS Released High Ruggedness InGaP HBT for GSM PA Application
02/2004    GCS Started Volume Production of PHEMT SWITCH
04/2003    GCS Released 0.5 um PHEMT Process
02/2003    GCS Started Volume Production of InGaP HBT for WLAN
11/2002    GCS Announced HVB InGaP HBT for Infrastructure Applications
10/2002    Upgraded ISO Certification to ISO-9001-2000
10/2002    Sam Lee Took Position as New CEO
09/2002    GCS Demonstrated 1310nm InGaAs PIN Diode
08/2002    GCS was Awarded DARPA InP HBT Contract
05/2002    GCS Elected Don Brooks as Chairman of the Board
03/2002    GCS was Qualified by Major IDM Company for InGaP Production
03/2002    GCS Closeed 3rd Round of Financing with $27.5M
12/2001    GCS Demonstrated InP SHBT & DHBT Technologies
05/2000    Production Began for two major IDM's
02/2000    GCS Delivered First 850 nm GaAs PIN Diode
11/1999    GCS Delivered First InGaP HBT Wafer for OC192 Applications
10/1999    GCS Became ISO9002 Certified
07/1999    GCS Signed Technology Foundry Agreement with Anadigics
12/1998    Grand Opening
03/1998    Clean Room Construction Began
11/1997    GCS Incorporated in California