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Sr. Compound semiconductor device Engineer

Job Description and Qualification:

Working on GaN HEMT, GaAs pHEMT, GaAs MESFET RF power device design, optimization, characterization and process integration of such devices. Will be hands-on in device simulation, DC/RF measurements and working on process integration issues in semiconductor fab. Requires detailed understanding of device physics of the above-mentioned devices and semiconductor processes of fabricating them. An advance degree (MS, PH.D) in EE, physics or materials science with 3-5 years experience or equivalent a must.